Abstract
In this work, CuCr2O4 nanoparticles were successfully prepared by an improved hydrothermal process, and a resistive switching memory behavior with Ag/CuCr2O4/fluorine-doped tin oxide structure is demonstrated. Specially, the resistive switching memory characteristics can be controlled by white-light illumination. The device can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 at room temperature. This study is useful for exploring the promising light-controlled resistive switching memory device in the development of resistive switching random-access memory. We demonstrate a resistive switching device based on Ag/CuCr2O4/FTO structure, and the device shows light-controlled resistive switching memory characteristics.
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