Abstract

In this paper, we are analyzed the switching characteristics of SiC MOSFET. According to the waveform of gate voltage VGS, drain voltage VDS and drain current ID of SiC MOSFET in switching process, the whole turn-on/off process can be divided into four phase: phase I, turn-on/off delay. Phase II, current/voltage rise. Phase III, voltage/current fall. Phase IV, VGS rise to VGG /0. The voltage and current changes at each phase are analyzed. To directly observe the parameters change, we draw a turn-on/off process diagram according to Sic MOSFET characteristics. As temperature variety, turn-on/off process are significantly affected and parameters change rate is proportional to the temperature.

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