Abstract
In view of the problem that the package parasitic inductance of the TO-247-3 wire-bonded discrete SiC MOSFET seriously affects its high-frequency switching characteristics, a press-pack package structure for discrete SiC MOSFET is designed and the influence of the two package structures on the switching characteristics of SiC MOSFET is compared in this paper. Firstly, a press-pack packaging method for small-sized discrete SiC MOSFET is proposed. Next, the parasitic inductance of the two packages is extracted by Ansys Q3D, and the switching characteristics of the SiC MOSFET in two package structures are evaluated by Pspice. Finally, an inductance clamped double-pulse test platform is built for experimental verification. Simulation and experimental results show that at the same current level, the press-pack package discrete SiC MOSFET has the lower package parasitic inductance, resulting in faster switching speed and less switching loss.
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