Research on the Switching Characteristics Based on the SiC MOSFET Model

Abstract

With the continuous development of power electronics technology, the third-generation semiconductor materials represented by SiC and GaN have significant advantages in the band gap width, breakdown electric field, thermal conductivity, electron saturation rate and other key parameters, which meet the needs of modern industry for high power, high voltage and high frequency. When the SiC MOSFET plays its high frequency advantage, with the increase of switching frequency, the voltage change rate and current change rate of the device will be larger in the process of turning on and off. This paper mainly analyzes the characteristics of SiC MOSFET devices, and modifies the model based on the model provided by the manufacturer. By establishing static and dynamic test circuits, the static characteristic curves of the model were observed, and the drain voltage and current waveforms of the original model and the optimized model were compared during the switching process. The results show that the switching time of the optimized model is improved, and the oscillation waveform is greatly improved. Then, the accuracy of the optimized model is verified by the double-pulse circuit, and the drain source voltage and the drain source current are studied and observed under different temperature and drive resistance conditions. This paper provides data support for improving the switching characteristics of SiC MOSFET in practical applications.