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Abstract
A statistics method is proposed to research the quantitative correlation between device performance and structure parameters fluctuation of avalanche photodiode (APD), through theoretical simulation and setting varied structure parameters. The characteristics of InGaAsP/InP APD and InGaAs/InP APD with the same primary structure parameters are discussed, and the quantitative correlation between excess bias fluctuation and structure parameters fluctuation of the two species APDs is concluded. It is revealed that the excess bias of APD is strongly determined by the doping of charge layer, the width of charge layer and multiplication layer, and it is slightly determined by the doping and the width of absorption layer. Moreover, the two species APDs have close response uniformity and technical stability at the same condition of material manufacture and device process.
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