Research on Dielectric Oxide Film Breakdown Mechanism of IC Device in Human Body Model

Abstract

This chapter discusses the breakdown mechanism of the film when electrostatic discharge (ESD) pulses in Human Body Model (HBM) is applied to oxide film based on the physical model of dielectric oxide film breakdown in integrated circuit (IC) device. The chapter builds a physical model of dielectric oxide layer breakdown in IC device and provides a physical equation about capture hole-charge density in the surface of medium with time changing. With the continual development of IC devices micromation, the active area and active width of oxide layer reflect sensitively to ESD. This is possibly because density defect effect causes the oxide layer to be latched up prematurely. The chapter focuses that the dynamics characteristic must be taken into consideration under ESD pulse once more. The voltage added to oxide layer is fluctuation voltage in the electrostatic discharge in HBM rather than constant voltage and the electronic current, J through oxide layer is not constant.