Abstract
Abstract This paper presents a comprehensive study on the replication of ultraviolet (UV) GaN quantum well light emitting diodes (LEDs) based on Han et al.’s experimental work. The replication structures of the electroluminescence emission at 353.6 nm with a narrow 5.8 nm linewidth validated the reliability of the simulation model. However, during the simulation run, a surprising and significant peak shift was observed, resulting in an emission peak at 358.6 nm, which deviated from the reported value. This discrepancy necessitates further investigations to understand the factors responsible for this unexpected change. Nonetheless, this correlation remains crucial as a benchmark for evaluating potential quantum well and device performance enhancements by following the existing structure and composition. Ultimately, it improves learning progress in scientific studies to the quantum level. Remarkably, the optimized devices exhibited exceptional stability at high current densities and demonstrated the efficacy of Drift-diffusion Charge Control (DDCC) solver simulation, which advances UV-LED technology, tallying with the literature claims and indirectly paving the way for high-performance applications.
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