Abstract
We report the experimental phenomenon of large resistance change inplasma oxidized TiOx/TiNx film fabricated on Wbottom-electrode-contact (W-BEC) array. The W-BEC in diameter 260 nm isfabricated by a 0.18 μm CMOS technology, and theTiOx/TiNx cell array is formed by rf magnetron sputteringand reactive ion etching. In current–voltage (I–V) measurementfor current-sweeping mode, large snap-back of voltage is observed,which indicates that the sample changes from high-resistance state(HRS) to low-resistance state (LRS). In the I–V measurement forvoltage-sweeping mode, large current collapse is observed, whichindicates that the sample changes from LRS to HRS. The currentdifference between HRS and LRS is about two orders. The thresholdcurrent and voltage for the resistance change is about 5.0×10−5 A and 2.5 V, respectively. The pulse voltage can also changethe resistance and the pulse time is as shorter as 30 ns for theresistance change. These properties of TiOx/TiNx film arecomparable to that of conventional phase-change material, which makes itpossible for RRAM application.
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