Reliable Low Voltage Selector Device Technology Based on Robust SiNGeCTe Arsenic-Free Chalcogenide

Abstract

Modern data-centric computing applications are increasingly demanding in terms of memory density and performance. The cross-point memory architecture based on the two-terminal one-selector/one-resistor memory cell is an attractive solution for high-density and 3D-compatible embedded memory. In this letter, we introduce a new arsenic-free chalcogenide material, namely SiNGeCTe, for low voltage selector applications, and we report on its remarkable reliability characteristics. The inclusion of the Si dopant allows for an enhanced material robustness in terms of stable high current operation and extended thermal stability (≥450°C, 30 min), and reduces the First Fire impact on the subthreshold conduction. We investigate the threshold voltage drift and reveal a marked trend of the drift slope with the thickness of the chalcogenide layer. Finally, based on the reported drift trend, the optimized device with 5 nm thickness is highlighted for low threshold voltage and low drift applications, demonstrating low threshold voltage drift with slope <30 mV/dec. The optimized device proves an excellent cycling endurance ≥1e10 cycles.