Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs

H.C Lai,Y.C King,Tahui Wang Tahui Wang,Sam Pan Sam Pan,N.K Zous,T.C Lu,W.J Tsai

doi:10.1109/icmts.2003.1197421

Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs

H.C Lai, Y.C King + Show 5 more

https://doi.org/10.1109/icmts.2003.1197421

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Publication Date: Mar 17, 2003

Citations: 8

Affiliation: National Tsing Hua University, Macronix International (Taiwan)

#Charge Pumping Method #Ultra-thin Gate Oxide MOSFETs + Show 8 more

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Abstract

The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFETs due to the increase of the direct tunneling, currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage Current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

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