(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single P b0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory

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We made systematic measurements of the maximum charge pumping (CP) current (I CPMAX) from single Si/SiO2 interface traps, and observed for the first time that their current range is 0<I CPMAX≤2fq, but not a fixed value of fq, where f is the gate pulse frequency, and q is the electron charge. Although the conventional belief is that I CPMAX is given by fqN, where N is the total number of traps contributing to the CP current, we experimentally clarified that this belief is basically wrong. Based on our results, we demonstrated fundamental trap-counting by the CP method. The current range 0<I CPMAX≤2fq is expected from the nature of the P b0 centers, therefore, the obtained results mean that we succeeded to directly and electrically observe single P b0 centers, for the first time.