Reliability simulations of the endurance performance of FLOTOX EEPROM cells using spice

Abstract

AbstractA SPICE model which enables transient simulations of the programming window degradation in FLOTOX EEPROM cells to be performed is presented. The simulation enables the endurance characteristics of the memory cells to be predicted at CAD level, when provided with the memory cell geometry, the programming conditions and the tunnel oxide quality. Thereby, the optimization of the cells' geometry with respect to the endurance performance as well as the selection of the optimum programming conditions which minimize the window degradation become possible, even prior to the fabrication of the memory cells.