Abstract
Numerical transient simulations of the programming window degradation in FLOTOX EEPROM cells are presented. Unlike analytical solutions, this numerical approach takes into account the actual waveform of the programming voltage. The programming window degradation can therefore be evaluated for realistic situations provided the degradation rate of the tunnel oxide is known. The simulation enables the endurance characteristics of the memory cells to be predicted for given programming conditions and tunnel oxide quality. Thereby, the optimization of the cell geometry with respect to the endurance performance as well as the selection of the optimum programming conditions which minimize the window degradation become possible, even prior to the fabrication of the memory cells.
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