Abstract
A theoretical model that explains the programming window degradation and the corresponding high- and low-state threshold voltage shifts as a function of the number of write-erase operations in FLOTOX EEPROM cells is proposed. The collapse of the programming window is quantitatively related to the oxide charge buildup in the FLOTOX tunnel region as the cycling of the memory cell is increased. The simplicity of the model should make possible a direct application at CAD level.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
