Abstract
Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hot holes may be responsible for the breakdown of ultra-thin silicon dioxide.
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