Abstract
This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with difference doping concentration of n-channel and p-channel substrates using Silvaco ATLAS TCAD Tools. The simulation work has been done to determine the performance of flash memory in terms of memory window, P/E characteristics and data retention and have been validated with the experimental work done by other researchers. From the simulation data, the trend of memory window at low P/E voltage is nearly overlapped between simulation and experimental data. The memory window at ±20V P/E voltage for n-channel and p-channel flash memory cell are 15.4V and 15.6V respectively. The data retention for the n-channel flash memory cell is retained by 75% (from 15.4V to 11.6V) whereas for the p-channel flash memory cell is retained by 80% (from 15.6V to 12.5V) after 10 years of extrapolation with -1/1V gate stress which shows that p-channel flash memory cell demonstrates better data retention compared to n-channel flash memory cell.
Highlights
The downsizing of silicon machinery is leading to a severe blockage of the coming era due to the complications of channel material such as short channel effects (SCE) in contemporary transistors [1, 2]
Since the vertical and lateral downsizing of flash memory cells lead to low program and erase (P/E) speed and large capacity of data storage for these cells but may results in expansion of capacitive coupling between the floating gate (FG) of neighboring cells which causes an extensive issue in threshold voltages (Vth) of the cells
We investigate the reliability of graphene-based FG non-volatile memory by observing the P/E characteristics, memory window and data retention in 10 years extrapolation under gate stress with a different type of channel
Summary
The downsizing of silicon machinery is leading to a severe blockage of the coming era due to the complications of channel material such as short channel effects (SCE) in contemporary transistors [1, 2]. An injected electron into thin poly-Si would be ballistically shifted across the FG resulting the P/E speed became slower and further create impact ionization in the blocking dielectric layer and reduce the dielectric reliability. To corroborate with this issue with thin poly-Si FG, a thin metal layer is used as a FG in flash memory cell is capable of extinguishing the ballistic current in flash memory cells. Its unique band structure could result in a new opportunity for nanoscale and low power devices By these considerations, there has been interested in utilizing graphene for Journal homepage: http://section.iaesonline.com/index.php/IJEEI/index
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