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Abstract
This work deals with magnetic tunnel junction (MTJ) based non-volatile memories (NVMs) and focuses on radiation issues. We investigate the Single Event Transient (SET) effects on a 28-nm FDSOI NAND-SPIN. The objective is to check the influence of the common current path in the metal strip of NAND-SPIN shared among various MTJs in terms of SET impact. The critical charge is determined according to the SET striking time and hardening strategies that improve the write operation robustness against SETs are proposed.
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