Abstract
We have detected and measured the room-temperature relaxation of ion implant damage in silicon wafers. Measured with thermal wave modulated reflectance and with double implant (i.e., damage dependent) sheet resistance the duration of the relaxation varies from as short as a few hours to as long as a few days, depending on dose and species. For dose monitoring techniques which rely on the effects of implant damage and which do not correct the relaxation effect, large errors in the measured dose values may result. We describe the thermal wave method for automatic measurement and correction for the relaxation effect, thus preserving the ability to make real-time, post-implant dose measurements with thermal wave techniques.
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