Abstract
The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed by subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing of silicon wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods for SSD in silicon wafers, including X-ray diffraction, micro-Raman spectroscopy, photoluminescence and laser scattering.
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