Abstract
AbstractAn AlN/GaN superlattice structure for the use as low index material in distributed Bragg reflectors in the blue‐violet spectral region was studied by transmission electron microscopy in cross section and plan view. The superlattice is found to partially relax during growth via the introduction of threading dislocations. Dislocation loops are found to form spontanously at discrete superlattice thicknesses indicating the accumulation of point defects. Such defects might hamper the light transmission in the targeted wavelength range. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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