Refractive index sensing based on semiconductor nanowire lasers

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We demonstrate a refractive index (RI) sensor based on semiconductor nanowire lasers. It is shown that the TE01 mode is responsible for lasing and sensing with the lasing threshold of 3 μJ/mm2 and the lasing peak width as narrow as 0.22 nm. A RI sensitivity of 21.2 nm/RIU (refractive index units), a figure of merit of approximately 100, and an RI detection limit of 1.4×10−3 RIU are achieved.