Abstract
Reflection-type photoplethysmography (PPG) pulse sensors are widely used in consumer markets to measure cardiovascular signals. Different from off-chip package solutions in which the light-emitting diode (LED) and photodetector (PD) are in separate chips, a GaN integrated optoelectronic chip with a novel ring structure is proposed to realize a PPG pulse sensor. The integrated optoelectronic chip consists of two multiple-quantum well (MQW) diodes. For higher sensitivities, the central and peripheral MQW diodes are suitable as the LED and PD, respectively. The results indicate that the integrated optoelectronic chip based on a blue LED epitaxial wafer is more suitable for the integrated PPG sensor based on device performance. Moreover, the amplitude of the PPG pulse signal collected from fingertips is higher than that from a wrist. The feasibility of the reflection-type PPG pulse sensor based on a GaN integrated optoelectronic chip is fully verified with the advantages of smaller sizes and lower costs.
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