Abstract
Reflection high-energy electron diffraction oscillations have been studied during the growth of strained InxGa1−xAs on GaAs by molecular beam epitaxy and migration-enhanced epitaxy. The oscillations decay rapidly for x≳0.2 during molecular beam epitaxy, while they persist for a long while during migration-enhanced epitaxy. We believe that the altered surface reconstruction pattern in the latter case changes the growth mode from three-dimensional to a near perfect two-dimensional mode for high strain values. Using migration-enhanced epitaxy, we demonstrate improved channel mobility and performance of GaAs-based modulation-doped field-effect transistors and narrower linewidths in the low-temperature excitonic photoluminescence of In0.1Ga0.9As/Al0.3Ga0.7As quantum wells.
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