Abstract
Reflection high-energy electron diffraction (RHEED) oscillations in gas source molecular beam epitaxy (MBE) of InP consist of a P-limited region (region I), In-limited region (region II) and a P-desorption limited region (region III). Precise calibration of In and P fluxes from RHEED oscillations can be made by finding, on a singular substrate at a low growth temperature, the intersection between region II and the linear portion of region I. It is shown that this new method can be applied to low temperature (300°C) migration enhanced epitaxy (MEE) growth of InP, and layers with much improved optical and electrical properties were obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
