A new method of flux calibration for gas source molecular beam epitaxy of InP and its application to migration enhanced epitaxy

Abstract

Reflection high-energy electron diffraction (RHEED) oscillations in gas source molecular beam epitaxy (MBE) of InP consist of a P-limited region (region I), In-limited region (region II) and a P-desorption limited region (region III). Precise calibration of In and P fluxes from RHEED oscillations can be made by finding, on a singular substrate at a low growth temperature, the intersection between region II and the linear portion of region I. It is shown that this new method can be applied to low temperature (300°C) migration enhanced epitaxy (MEE) growth of InP, and layers with much improved optical and electrical properties were obtained.