Abstract
Impedance spectra of multiple resistive states in a stable-switching Resistive Random-Access Memory device based on a stack of Ru/HfO2/Zr/W was studied in this work. Using these observations, reflection-coefficients were extracted for different resistive states. Clear changes in the reflection coefficient for different resistive states were observed. The device in a low resistive state showed a significantly higher reflection coefficient compared to its high resistive state. An increasing trend in the reflection coefficient was observed as the device state was gradually reconfigured towards lower resistances. Maximum frequency for reflection increased with the decrease in the device area. The physics behind this observation is attributed to the interplay of oxygen ion transport among the interfacial layer, conductive filament, and HfO2-film.
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