Abstract
Effect of current compliance on the resistive switching characteristics of SmGdO3 based resistive random access memory devices has been investigated. It was observed that increasing current compliance during the set process of device decreases the resistance of device in low resistance state and set/reset voltages which was attributed to increase in diameter of conductive filament on increasing current compliance. Switching between low and high resistance states was attributed to formation and rupture these conductive filaments. By systematically varying the current compliance non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed which remained mostly unchanged with respect to time and switching cycles. These findings seem to be promising for futuristic multi-bit nonvolatile memory applications.
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