Abstract
The fluorine concentration in the WSi/sub x/ and underlying gate oxide after anneal is substantially lower in the DCS-WSi/sub x/ process, when compared to that in the SiH/sub 4/-WSi/sub x/ process. The reduced fluorine concentration from the DCS-WSi/sub x/ process results in little or no increase in the effective gate oxide thickness. The C1 concentration in DCS-WSi/sub x/ is about four orders of magnitude higher than that in SiH/sub 4/-WSi/sub x/ films, but the C1 concentrations in the gate oxide are at the same level for both types of films. >
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