Reduction of effective barrier height and low-frequency noise of Al–GaAs Schottky contacts by hydrocarbon ion beam irradiation

Abstract

In this study the influence of low energy hydrocarbon ion irradiation at a glancing angle on electronic properties of the GaAs surface and Al–GaAs interface was investigated. The formation of a thin carbon enriched multiphase layer on the GaAs surface was observed. Despite this, reduction of the low-frequency noise, (especially at low temperatures), and effective barrier height of Schottky contacts were achieved at irradiation doses ⩾10 15 ion/cm 2. The obtained results are explained by the homogenization of the current flow through the Al–GaAs Schottky contact interface layer.