Comparative Study of Biaxial and Uniaxial Mechanical Stress Influence on the Low Frequency Noise of Fully Depleted SOI nMOSFETs Operating in Triode and Saturation Regime

Abstract

This paper presents an experimental comparative study of uniaxial and biaxial strain techniques influence on the low frequency noise of planar fully depleted SOI nMOSFETs operating in linear and saturation regimes. The comparison between devices from the same technology with these two strained techniques demonstrated a reduction of low frequency noise for devices with both strain technologies in linear regime for shorter devices (below 410 nm). In saturation regime the reduction of low frequency noise for uniaxial and biaxial strain also occurs, but does not depend on the channel length, and the reduction of low frequency noise in favor of both strain technologies is more pronounced for channel length of 160 nm.