Reduction of low-frequency noise in MOSFETs under switched gate and substrate bias

Abstract

A strong reduction of MOSFET low-frequency noise under switched gate bias conditions is observed for forward substrate bias. The effect of forward substrate bias is significantly larger in switched compared to constant gate bias conditions. Experimental results reveal that forward substrate bias is most effective when applied during the off-state of the transistor. This finding is explained by the physics of trap emission time constants and suggests new topologies and biasing schemes for analog CMOS circuits.