Abstract
Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs.
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