Abstract
This paper reports the hot-carrier induced device degradation of fully depleted (FD) n-channel SOI MOSFETs with a self-aligned ground-plane electrode in the silicon substrate underneath the buried oxide. The ground-plane configuration is shown to reduce short-channel effects, BJT effects and hot-carrier effects. Based on measurements of hot-carrier degradation rate, it is predicted that the maximum allowable supply voltage of ground-plane FDSOI MOSFET is higher than that of FDSOI device without a ground plane.
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