Abstract
A novel rectangular shape differential CMOS split-drain Hall Effect magnetic field-effect transistor (MAGFET) was designed and fabricated employing a CMOS 0.5 μm process. The detection and monitoring of single 2.8 μm diameter magnetic beads was successfully performed using this MAGFET design. Based on the device modeling, simulation and the signal to noise ratio analysis, it was found that the optimal sensitivity can be achieved when the MAGFET channel width to length ratio is equal to 1.3. Further, it is shown through that when the MAGFET is scaled down, its SNR performance can sustain its peak, while being more sensitive to the geometry variations.
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