Abstract
Thin polycrystalline n-type InSb films were prepared by cathode sputtering. The Hall mobility of the films was about 300 cm 2 Vs . When the films were recrystallized by melting in an argon atmosphere at normal pressure, an influence of the sputtering conditions on the properties of the recrystallized films was found. Room temperature mobilities of 4000 cm 2 Vs were achieved after recrystallization.
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