Recovery of PMOSFET NBTI under different conditions**Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61404097, 61334002, 61106106, and 61176130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140415).

Abstract

Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.