Abstract
New photoluminescence (PL) recovery effects induced by below band-gap excitation have been observed for the fatigued emission bands associated with the deep donor EL2 in undoped semi-insulating liquid encapsulated Czochralski-grown GaAs crystals. The PL intensity quenched by a pre-excitation with a 1.06-µm light is restored gradually by a persistent irradiation of the same 1.06-µm light with a reduced excitation intensity in some samples and by a 1.32-µm light in all the samples. These recovery effects are explained by the occurrence of optical transition from the metastable state to the normal state of the EL2 level.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
