Abstract
The wavelength dependence and polarization characteristics of the infrared light scattered from an undoped GaAs crystal were investigated in the 90° angle infrared light scattering configuration. The scattering is Rayleigh scattering from scatterers which are always associated with the dislocations, and they are classified into three types,S, L A , andL G scatterers, according to their polarization characteristics. TheS, L A , andL G -scatterers are thought to be small As clusters, large As precipitates and large Ga precipitates, respectively.
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