Abstract
AbstractRadio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameters and surface recombination velocity (SRV) in doubly-capped 0.55-eV p-InGaAsSb epitaxial layers, doped at 2 × 1017 cm-3, for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90 to 100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 × 10-11 cm3/s and Auger coefficient (C) of 1 × 10-28 cm6/s.
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