Abstract
A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.
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