Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique

Abstract

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk and surface recombination parameters in doubly capped, 0.50–0.59-eV, p-type InGaAsSb epitaxial materials. The InGaAsSb lifetime structures with variable active-layer thicknesses are used to extract the surface recombination velocity (SRV), while samples with different active-layer doping concentrations have been used to determine the Auger and radiative recombination coefficients. The RF photoreflectance measurements and analysis are compatible with a radiative recombination coefficient (B) of approximately 3×10−11 cm3/s, Auger coefficient (C) of 1×10−28 cm6/s, and SRV of ∼103 cm/s or lower for 0.50–0.59 eV, doubly capped, p-type InGaAsSb epitaxial layers.