Abstract
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. TJ-Monopix2 and LF-Monopix2 chips are the most recent large-scale prototype DMAPS in their respective development line originally designed for the ATLAS Inner Tracker outer layer environment. In this contribution, the latest laboratory characterizations and beam test results of both DMAPS are presented with a special emphasis on performance after irradiation to high fluences.
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