Abstract
Epitaxial Al films have been deposited by ICB equipment on room temperature Si substrates. The equipment available for forming Al epitaxial and single crystal films has been discussed. Epitaxial Al films can also be deposited on various semiconductor and insulator substrates such as Ge, GaAs, CaF 2 and sapphire at room temperature. Application of epitaxial Al film to VLSI has been proposed. Deposited Al films are thermally and electrically stable. The prospect of VLSI application of epitaxial Al films is shown.
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