Abstract
This paper reviews the metal film formation by ionized cluster beam (ICB) technique on various kinds of substrates. The ICB enables heteroepitaxy of metal films for lattice misfit larger than 25%. The film growth process was studied by in situ MEED, AES and XPS analyses. The films were also examined by ex situ electron diffraction and atomic resolution TEM. On Si(111), single crystal Al film was formed. The Al deposited on Si(100) formed bicrystal structure. The film-substrate interface and the bicrystal grain boundary were very sharp and had little distortion of atomic arrangement. This explains the high thermal stability of the metal films deposited by ICB. Epitaxial Al films were also formed on CaF2, Ge, GaAs, and sapphire substrates. In the film formation of Cu and Au on Si substrates, ICB was very effective to suppress the reaction and interdiffusion of film and substrate. These results indicate that the ICB technique is effective for the formation of high quality metal films and stable metal-semiconductor interfaces. These films are promising for semiconductor metallization, laser mirrors, and x-ray mirrors for advanced applications.
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