Abstract
Recent developments in the deposition of ferroelectric thin films involving physical vapor depositions are described, which include (a) multimagnetron sputter deposition, (b) multi-ion-beam reactive sputter (MIBERS) deposition, (c) pulsed excimer laser ablation, and (d) electron cyclotron resonance plasma-assisted deposition. The prevailing intrinsic low-energy ion bombardment during the growth process, common to these methods, may be used to control composition, crystallization temperature, and microstructure. A low-energy (60–75 eV) off-normal incidence ion bombardment in the MIBERS technique and a dc glow discharge in the excimer laser ablation of ferroelectric Pb(Zr,Ti)O3 thin films indicated a reduction in the phase formation/crystallization temperature, improved the electrical properties, microstructure, and the surface smoothness. Discussion is presented emphasizing the effects of low-energy ion bombardment during deposition of ferroelectric films.
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