Abstract
Abstract Recent developments in ferroelectric thin film deposition involving plasma based approaches, are described, which include a) multi-magnetron sputter deposition, b) Multi-ion-beam reactive sputter (MIBERS) deposition, c) Pulsed excimer laser ablation and d) ECR (Electron cyclotron resonance) plasma assisted deposition. These methods commonly prevailed intrinsic low energy ion bombardment during the growth process, which may be used for the control over composition, crystallization temperature and microstructure. A low energy (60–75 eV) ion bombardment of the ferroelectric Pb(Zr, Ti)O3 thin films indicated a reduction in the phase formation/crystallization temperature, improved the electrical properties, microstructure and the surface smoothness. Discussion is presented exphasizing the effects of low energy bombardment in different deposition processes. Recent findings using rapid thermal annealing process are also described.
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