Abstract
1.3 μm GaAs-based quantum dot (QD) lasers demonstrate parameters improved over InP-based devices. They exhibit lower threshold current densities and losses, higher differential efficiencies and improved temerature stability. Highspeed operation is demonstrated. Reduced linewidth enhancement factor advantageous for low-chirp operation makes it possible to suppress dramatically filamentation effects destroying lateral far-field pattern. GaAs-based QD 1.3 μm VCSEL with 8 μm oxide aperture wavelength emits up to 1.2 mW CW multimode.
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