Very low threshold oxide-confined 1.3 /spl mu/m GaAs-based quantum dot laser

Abstract

Summary form only given. Research on GaAs-based quantum dot (QD) lasers operating at 1.3 /spl mu/m wavelength has been rapidly advancing since the demonstrations of room-temperature operation in pulsed-mode and continuous wave (CW) operation. Native oxide confinement is of interest for this type of laser, similar to that used for quantum well edge-emitting lasers and quantum dot vertical cavity surface emitting lasers. The native oxide confinement is especially interesting due to the lateral "built-in" electronic confinement potentials that confine the current in lateral direction. We report on the room-temperature CW operation of oxide-confined single-layer InGaAs QD lasers with very low threshold current of 1.2 mA. The low threshold operation is achieved due to low optical waveguide loss of the native oxide.