Abstract
Summary form only given. Intensive research has been conducted in improving the performance of quantum dot (QD) lasers. We describe the achievement of efficient CW lasing at /spl lambda//spl ap/1.28 /spl mu/m by narrow-stripe, laterally-oxide-confined QD lasers containing two InAs quantum dot-in-well (DWELL) layers, with very low threshold current density (24 A/cm/sup 2/), high differential efficiency (55%), and a wide temperature range for CW operation (T/sub max/>100/spl deg/C). The QD laser was grown by solid-source MBE and has an oxide-confined device structure. The active region consists of two InAs DWELL layers separated by a 30 nm GaAs barrier layer, which is situated in the middle of a 220 nm thick GaAs waveguide bounded by AlGaAs cladding layers.
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