Abstract
A simple locally-sintered process for realizing rear point contacts of the Passivated emitter and rear cells, of which rear surface is passivated by Al2O3/SiNx double layers, is demonstrated in this paper. As compared to conventional cells passivated by aluminium back surface field, the cells show higher open circuit voltage and short circuit current. The sintering effect on the final passivation quality of stacks Al2O3/SiNx during the sintering process is investigated and discussed in detail.
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Schedule a callMore From: IOP Conf. Series: Materials Science and Engineering
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